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| BBY 51-07 Silicon Tuning Diode * High Q hyperabrupt dual tuning diode * Designed for low tuning voltage operation * For VCO's in mobile communications equipment Type BBY 51-07 Marking Ordering Code HHs Q62702- Pin Configuration Package 1 = C1 2 = C2 3 = A2 4 = A1 SOT-143 Maximum Ratings per diode Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 ... + 150 - 55 ... + 150 Unit V mA C VR IF Top Tstg Semiconductor Group 1 Jan-08-1997 BBY 51-07 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics per diode Reverse current Values typ. max. Unit IR 10 200 nA VR = 6 V, TA = 25 C VR = 6 V, TA = 65 C AC characteristics per diode Diode capacitance CT 4.8 3.6 2.9 2.6 5.3 4.2 3.5 3.1 1.75 1.78 0.5 0.37 0.12 2 6 5 4.2 3.5 pF VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/CT4 1.55 2.15 pF 1.4 2.2 0.7 pF nH - VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference C1V-C3V C3V-C4V 0.3 VR = 1 V, VR = 3 V, f = 1 MHz Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group 2 Jan-08-1997 BBY 51-07 Diode capacitance CT = f (VR) f = 1MHz Temperature coefficient of the diode capacitance TCc = f (VR) f = 1MHz Semiconductor Group 3 Jan-08-1997 |
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